High frequency power transistor device
CA 2353473 A1 · Owner: Ballard, Timothy · Inventors: Ballard, Timothy; Blair, Cynthia; Curtis, James
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An output-matched LDMOS RF power transistor device (100) includes a semiconductor die (108) having a plurality of interdigitated electrodes (110) formed thereon, the electrodes each having respective input terminals (112) and output terminals (114). An input lead is coupled to a first terminal (107) of an input matching capacitor (106) by a first plurality of conductors (105) (e.g. bond wires), with a second terminal of the matching capacitor coupled to a ground (145). The first terminal of the matching capacitor is also coupled to the electrode input terminals by a second plurality of conductors (116). A conductive island (120) isolated from the ground is coupled to the electrode …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 23, 1999. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended November 23, 2019.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 23, 2021.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.