Method of forming inorganic compound solid and method of manufacturing semiconductor device employing the same
CA 2351607 A1 · Owner: Rohm Co. Ltd. · Inventors: Fujimori, Yoshikazu; Nakamura, Takashi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for producing an excellent inorganic compound solid substance (such as ferroelectric film) by heat treatment at a relatively low temperature by using an organic compound material containing a metallic element. To form a ferroelectric film, a solution of an organic compound material containing a metallic element is applied to a semiconductor substrate (S41) the substrate , is dried (S42) and preliminarily baked (S43) the steps are repeated until the , thickness of the film formed on the substrate reaches a predetermined value organic substances are removed by, for example a heat treatment (at about , 550~C) in a low-pressure atmosphere (at about 50 Torr) (S45) the inorganic , …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 22, 1999. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended November 22, 2019.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 22, 2021.
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Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.