Semiconductor laser device
CA 2350311 A1 · Owner: Tsukiji, Naoki · Inventors: Yoshida, Junji; Tsukiji, Naoki
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A semiconductor laser device having high optical output power is provided. The semiconductor laser device has an n-type lower cladding layer, a lower optical confinement layer, an active layer having a quantum well structure, an upper optical confinement layer a Zn-doped, p-type upper cladding layer and a cap layer formed on an, n-type semiconductor substrate in this order. A nondoped semiconductor layer having a thickness of 10 to 100 nm in, particular, a nondoped InP layer, is interposed between the upper optical confinement layer and the Zn-doped ptype upper cladding layer.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed June 13, 2001. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended June 13, 2021.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by June 13, 2023.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.