A method for the heat treatment of a znse crystal substrate, heat treated substrate and light emission device
CA 2348124 A1 · Owner: Fujiwara, Shinsuke · Inventors: Fujiwara, Shinsuke; Namikawa, Yasuo
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
This invention relates to a method for the heat treatment of a ZnSe crystal substrate to dope it with Al as a donor impurity a ZnSe crystal, substrate prepared by this heat treatment and a light-emitting device using the ZnSe crystal substrate, in particular the method for the heat treatment , of a ZnSe crystal substrate comprising previously forming an Al film on the substrate, first subjecting the substrate to a heat treatment in a Se atmosphere and then subjecting to a heat treatment in a Zn atmosphere.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed May 16, 2001. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended May 16, 2021.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by May 16, 2023.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.