Vacuum field-effect device and fabrication process therefor
CA 2345629 A1 · Owner: Potter, Michael D. · Inventors: Potter, Michael D.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An ultra-high-frequency vacuum-channel field-effect microelectronic device (VFED or IGVFED) has a lateral field-emission source (60) a drain (150), and , one or more insulated gates (40 160). The insulated gate(s) are preferably disposed to extend in overlapping alignment with the emitting edge (85) of the lateral field-emission source and with a portion of the vacuum-channel region (120). If the gate(s) are omitted, the device performs as an ultra-high speed diode. A preferred fabrication process for the device uses a sacrificial material temporarily deposited in a trench for the vacuum-channel region which is covered with an insulating cover. An access hole in the cover allows …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed July 25, 2000. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended July 25, 2020.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by July 25, 2022.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.