Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit
CA 2343441 A1 · Owner: Heffner, William R. · Inventors: Muthiah, Ranjani C.; Parayanthal, Padman; Heffner, William R.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A novel contact structure and method for a multilayer gettering contact metallization is provided utilizing a thin layer of a pure metal as the initial layer, formed on a semiconductor cap layer. During formation of the contact structure, this thin metal layer reacts with tile cap layer and the resulting reacted layer traps, mobile impurities and self-interstitials diffusing within the cap layer and in nearby, metal layers, preventing further migration into active areas of the semiconductor, device . The contact metallization is formed of pure metal layers compatible with, each other and wide the underlying semiconductor cap layer such that depth of reaction is minimized and …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 6, 2001. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended April 6, 2021.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 6, 2023.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.