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Canadian application, no grantCanada

Vapor deposition routes to nanoporous silica

CA 2336770 A1 · Owner: Roderick, Kevin H. · Inventors: Ramos, Teresa; Roderick, Kevin H.; Smith, Douglas M.

CIPO record

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Abstract From the Canadian patent

A process for the manufacture of nanoporous silica dielectric films by vapor deposition of silica precursors on a substrate. The process provides for vaporizing at least one alkoxysilane composition; depositing the vaporized alkoxysilane composition onto a substrate; exposing the deposited alkoxysilane composition to a water vapor, and either an acid or a base vapor; and drying the exposed alkoxysilane composition, thereby forming a relatively high porosity, low dielectric constant, silicon containing polymer composition on the substrate.

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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.

Why it's free to use

  • Filed July 1, 1999. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended July 1, 2019.
  • A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by July 1, 2021.
  • We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledJuly 1, 1999
GrantedNo grant recorded
Term endedJuly 1, 2019
Patent numberCA 2336770 A1
Classification (IPC)H01L21/31 +2 more

Timeline

Timeline From CIPO dates

2000200220042006200820102012201420162018Application filedJuly 1, 1999Term endedJuly 1, 2019

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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.