Electrode for semiconductor device and its manufacturing method
CA 2328907 A1 · Owner: Toyosaki, Koichi · Inventors: Tsukiji, Naoki; Toyosaki, Koichi; Nakajima, Akifumi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An electrode for a semiconductor device which can be excellently die-bonded or wire-bonded to a sub-mount, wherein the electrode is formed on a semiconductor in ohmic contact therewith and comprises an underlying layer electrode (E1) formed on the semiconductor in a layered structure and an overlying layer electrode (E2) covering the top and/or side surface of the underlying layer electrode (E1), and the overlying layer electrode is formed by a vapor deposition device or a sputtering device which has a holder tilted with respect to the electrode material and capable of rotating and revolving.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 17, 2000. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended February 17, 2020.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 17, 2022.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.