Group iii-v nitride semiconductor growth method and vapor phase growth apparatus
CA 2313155 C · Owner: Hirota, Ryu · Inventors: Hirota, Ryu; Tatsumi, Masami
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A vapor phase growth apparatus 1 for growing a group III-V nitride semiconductor (GaN) comprises a reaction ampoule 3 having a container 11 disposed therein for containing a group III element and an inlet 7 for introducing nitrogen; excitation means 15 for plasma-exciting nitrogen introduced from the inlet 7; and heating means 13 for heating a seed crystal 10 disposed within the reaction ampoule 3 and the container 11; wherein, upon growing the group III-V nitride semiconductor on the seed crystal 10 nitrogen is, introduced from the inlet 7 and no gas is let out from within, the reaction ampoule 3.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed June 29, 2000 and granted September 30, 2003. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended June 29, 2020.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by June 29, 2022.
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Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.