A method for minimizing the critical dimension growth of a feature on a semiconductor wafer
CA 2310057 A1 · Owner: Tegal Corporation · Inventors: Olson, Kurt A.; Deornellas, Stephen P.; Rajora, Paritosh
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for minimizing the critical dimension growth of a feature on a semiconductor wafer includes performing an etch operation in a reactor (20) and controlling the temperature of the wafer (26) by controlling the pressure of the gas contacting the backside of the wafer (26) and/or providing a heat source (56) such as for example in the chuck (46) or electrode (28) associated with the wafer (26) in order to heat the wafer (26).
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 3, 1998. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended November 3, 2018.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 3, 2020.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.