Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
CA 2309583 A1 · Owner: Li, Xu · Inventors: Hymes, Diane J.; Zhao, Yuexing; De Larios, John M.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination. The figure illustrates a flowchart of one embodiment of the process of the present invention wherein (310) is the step of polishing a …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 18, 1999. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended February 18, 2019.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 18, 2021.
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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.