Infrared sensor and method of manufacturing the same
CA 2305099 C · Owner: Inoue, Kazuhiro · Inventors: Inoue, Kazuhiro
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A SiO2 layer is formed on a heat sink section having a cavity by thermal oxidation and an aluminum oxide layer is formed on the SiO2 layer by an electron beam evaporation process at a substrate temperature of 60°C or less and at a deposition rate of 0.8 nm/s or less. The resulting aluminum oxide film is amorphous and has partial oxygen defects. The SiO2 layer and the aluminum oxide layer constitute a heat insulating thin-film. A thermoelectric conversion element and an infrared-absorbing layer are formed on the heat insulating thin-film to form an infrared sensor. The infrared sensor can be produced at low production costs and has high sensitivity.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 12, 2000 and granted December 23, 2003. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended April 12, 2020.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 12, 2022.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.