Field-effect transistor and method of manufacturing same

Abstract From the Canadian patent

A dual gate structure field-effect transistor is manufactured by forming a trench in an SOI substrate comprised of a semiconductor support substrate a buried, insulation layer formed on the support substrate and an SOI semiconductor layer formed on the insulation layer so as, to extend from an upper surface of the SOI substrate through the SOI semiconductor layer and the buried insulation layer to the semiconductor support substrate thereby dividing the SOI semiconductor layer into two SOI semiconductor layer regions that form a source electrode and a drain electrode; forming a gate electrode constituted of low resistance material in a portion of the trench in contact with the buried …