Process for producing epitactic-silicon germanium layers

Abstract From the Canadian patent

A method for producing relaxed epitaxy layers on a semiconductor substrate by an epitaxy process, particularly molecular beam epitaxy with a hydrogen , source, wherein, the following steps occur during an in situ process sequence: a hydrogencontaining, intermediate layer is deposited on the substrate surface or diffused into the substrate near, the surface; a strained epitaxy layer is grown on this intermediate layer; and the epitaxial, layer subsequently is relaxed by a temperature treatment. A preferred layer sequence, formed according to the above method includes a substrate of silicon with a hydrogen-containing intermediate layer that is deposited thereon or diffused into the …