A titanium nitride diffusion barrier for use in non-silicon technologies and metallization method
CA 2292769 C · Owner: Latta, Eberhard · Inventors: Oosenburg, Albertus; Deutsch, Urs; Patrick, William
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
As will be described in more detail hereinafter there is disclosed herein a , titanium nitride diffusion barrier layer and associated method for use in nonsilicon semiconductor technologies. In one aspect of the invention a , semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 20, 1999 and granted November 4, 2003. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended April 20, 2019.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 20, 2021.
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Timeline
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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.