Annealing of a crystalline perovskite ferroelectric cell and cells exhibiting improved barrier properties
CA 2290370 A1 · Owner: Ramesh, Ramamoorthy · Inventors: Dhote, Anil M.; Ramesh, Ramamoorthy; Aggarwal, Sanjeev
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method of fabricating a ferroelectric capacitor usable as a memory cell in a non-volatile integrated circuit memory integrated on a silicon substrate (22) preferably including an intermetallic barrier layer. The memory cell consists of a ferroelectric layer (50), for example of lead niobium zirconium titanate (PNZT) sandwiched between metal oxide electrodes (52 and 46) for example of , lanthanum strontium cobalite (LSCO) which forms with a crystalline , orientation and provides a growth template for the crystalline formation of the ferroelectric. The intermetallic layer (44) prevents diffusion of oxygen from the bottom LSCO electrode (46) down to the underlying silicon (40). At …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed June 8, 1998. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended June 8, 2018.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by June 8, 2020.
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