An epitaxial wafer, a manufacturing method of the epitaxial wafer, and a surface cleaning method for a compound semiconductor substrate used in the epitaxial wafer
CA 2283532 A1 · Owner: Sumitomo Electric Industries, Ltd. · Inventors: Matsuoka, Toru; Doi, Hideyuki
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The present invention provides a surface cleaning method of a II-VI compound semiconductor substrate wherein the density of crystal defects newly generated on the surface of the substrate when the epitaxial layer is grown which, extend a large negative influence on the properties of a semiconductor device can, be reduced, and wherein the surface of the substrate is mirror-like and exceedingly smooth and clean. This method comprises a process for removing the damaged layer on the surface of a II-VI compound semiconductor substrate and a process for etching the surface of the compound semiconductor substrate from which the damaged layer has been removed within a range of 0.01 to 3 µm using …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 24, 1999. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended September 24, 2019.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 24, 2021.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.