Strontium bismuth niobate tantalate ferroelectric thin film
CA 2281763 A1 · Owner: Symetrix Corporation · Inventors: Mcmillan, Larry D.; Cuchiaro, Joseph D.; Paz De Araujo, Carlos A.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A thin film ferroelectric material (500) for use in integrated memory circuits (300, 400), such as FERAMS (300) and the like contains strontium bismuth , niobium tantalate having an empirical formula SrBi2+E(NbXTa2-X)O9+3E/2 wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. A method of operating a ferroelectric memory cell (400) including providing such a material having the foregoing formula in a first polarization state, subjecting the thin film ferroelectric material in the first polarization state to a plurality of unidirectional voltage pulses; and thereafter …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 4, 1998. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended February 4, 2018.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 4, 2020.
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Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.