Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate

Abstract From the Canadian patent

A thin silicon carbide film is epitaxially grown by MBE etc. on the silicon carbide crystal growth surface (1a) of a substrate (1) while keeping silicon atoms (2) present in excess relative to carbon atoms. Thus a silicon carbide , substrate with a satisfactory crystalline state can be formed at a low temperature with good reproducibility. This growth is possible even at temperatures not higher than 1300 ~C, and it is possible to form a heavily doped film, a selectively grown film, and a film comprising cubic silicon carbide grown over hexagonal crystals. When cubic silicon carbide is crystallized on hexagonal crystals, the use of an off-cut substrate having a plane slanting to the …