Thin film deposition method
CA 2264371 C · Owner: Dotter, Buddie R. Ii · Inventors: Izu, Masatsugu; Dotter, Buddie R. Ii; Hasegawa, Wataru
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method of depositing, by plasma assisted chemical vapor deposition an, oxygen and water vapor barrier coating atop a temperature sensitive substrate from a precursor gaseous mixture which includes at least a silicon-containing gas and an oxygen-containing gas is provided. The method involves the steps of performing a plasma pretreatment of the low temperature substrate prior to the microwave deposition step and, introducing a sufficient flow rate of oxygen-containing gas into the precursor mixture to eliminate the formation of silicon-hydrogen bonds in the deposited coating.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 10, 1993 and granted June 3, 2003. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended November 10, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 10, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.