Single crystal sic and a method of producing the same
CA 2263352 C · Owner: Nissin Electric Co. Ltd. · Inventors: Tanino, Kichiya
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A .beta.-SiC polycrystal plate (2) having a thickness of not less than 10 µm is formed on the surface of an .alpha.-SiC single crystal substrate (1) by PVD or thermal CVD to prepare a composite (M) which is heat-treated in , the temperature range of from 650 to 2400 °C to transform the polycrystal of the .beta.-SiC polycrystal plate (2) into a single crystal permitting a single crystal aligned in the same orientation as the crystal axis of the .alpha.-SiC single crystal substrate (1) to be grown. This process serves to easily and efficiently prepare a high-quality single crystal of SiC substantially free from a micropipe defect and defects caused by the influence of the micropipe defect.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed June 23, 1998 and granted May 6, 2003. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended June 23, 2018.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by June 23, 2020.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.