Method of fabricating capacitors in semiconductor devices
CA 2259725 A1 · Owner: Mitel Corporation · Inventors: Ouellet, Luc; Tremblay, Yves
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method of making a semiconductor device comprises the steps of providing an, insulating layer forming a series of holes in the insulating layer depositing a first layer of, a metal, or a compound thereof on the insulating layer such and in the holes forming a, dielectric layer on the first layer the dielectric consisting of a compound of the metal and, forming a second layer of the metal or a compound thereof, on the dielectric layer. The first, second and dielectric layers form a conformal capacitive sandwich structure extending into the holes.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed January 20, 1999. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended January 20, 2019.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by January 20, 2021.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.