Single crystal sic and a method of producing the same
CA 2253136 C · Owner: Tanino, Kichiya · Inventors: Tanino, Kichiya; Hiramoto, Masanobu
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
The single crystal SiC according to the invention is produced in the following manner. Two complexes M in each of which a polycrystalline film 2 of .beta.-SiC (or .alpha.-SiC) is grown on the surface of a single crystal .alpha.-SiC substrate 1 by thermochemical deposition, and the surface 2a of the polycrystalline film 2 is ground so that the smoothness has surface roughness of 200 angstroms RMS or smaller preferably, 100 to 50 angstroms RMS are subjected to a heat treatment under a state where the complexes are closely fixed to each other via their ground surfaces 2a', at a high temperature of 2,000°C or higher and in an atmosphere of a saturated SiC vapor pressure, whereby the …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 6, 1998 and granted January 22, 2002. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended November 6, 2018.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 6, 2020.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.