Semiconductor device and fabrication method thereof
CA 2252875 C · Owner: Iwata, Naotaka · Inventors: Iwata, Naotaka; Nishimura, Takeshi B.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
In order to form a first capacitor having a small capacitance and a second capacitor having a large capacitance on a substance with a minimum number of manufacturing steps at least one of electrodes of the first capacitor and at least one of electrodes of the second capacitor are formed simultaneously.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 5, 1998 and granted November 19, 2002. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended November 5, 2018.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 5, 2020.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.