Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same
CA 2238857 C · Owner: Kamisawa, Akira · Inventors: Kamisawa, Akira; Fujimura, Norifumi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A ferroelectric material having a basic structure of REMnO3, said ferroelectric material comprises RE and Mn one of which is contained in excess of the other to a limit of 20 at. % or the ferroelectric material is further added with a 4-valence element. Also, a method of forming a ferroelectric material, comprises decreasing an oxygen partial pressure within a growth reactor such as a vacuum deposition reactor, and forming a film on a film-forming surface of a substrate (4) while blowing an oxidizing source thereto. This structure provides a ferroelectric material low in leak current and improved in ferroelectric characteristics. Where using the material for a semiconductor memory device, …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 26, 1997 and granted November 19, 2002. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended September 26, 2017.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 26, 2019.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.