Forming contacts on semiconductor substrates for radiation detectors and imaging devices

Abstract From the Canadian patent

A method, suitable for forming metal contacts (31) on a semiconductor substrate (1) at positions for defining radiation detector cells includes the , steps of forming one or more layers of material (11 12) on a surface of the , substrate with openings (23) to the substrate surface at the contact positions; forming a layer of metal (24) over the layer(s) of material and the openings; and removing metal at (28) overlying the layer(s) of material to separate individual contacts. Optionally a passivation layer (11) to be left , between individual contacts on the substrate surface may be applied during , the method. A method according to the invention prevents etchants used for removing …