Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy
CA 2225930 C · Owner: Joshi, Abhay M. · Inventors: Joshi, Abhay M.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A monolithic Optoelectronic Integrated Circuit including a photodiode and a CMOS readout circuit is described in which the diode is formed by compositionally graded layers of In x Ga1-x As selectively epitaxially grown between a substrate of Si and an absorption layer of In x Ga1-x As, the areas of said layers being less than 500 µm2 and wherein a readout circuit on said substrate is coupled to said diode.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed June 26, 1996 and granted March 27, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended June 26, 2016.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by June 26, 2018.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.