Field effect transistor
CA 2225844 C · Owner: Murata Manufacturing Co. Ltd. · Inventors: Seto, Hiroyuki; Ariyoshi, Hisashi; Inai, Makoto
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A heterostructure insulated-gate field effect transistor comprises a channel layer, barrier layer and a contact layer. The barrier layer is made of a material having an electron affinity smaller than that of the channel layer and equal to that of the contact layer. Due to the single heterostructure the, series resistance between the channel layer and the source (drain) electrode can be decreased without employing complicated selective ion implanting or selective epitaxial growing method.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed December 23, 1997 and granted November 6, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended December 23, 2017.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by December 23, 2019.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.