Barrier layer for ferroelectric capacitor integrated on silicon
CA 2225681 C · Owner: Bell Communications Research, Inc. · Inventors: Ramesh, Ramamoorthy
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A ferroelectric cell in which a ferroelectric stack (44) of a perovskite ferroelectric sandwiched by cubic perovskite metal-oxide conductive electrodes (50, 56) are formed over a silicon body such as a polysilicon plug (42) , penetrating a field oxide (40) over a silicon transistor (34). According to the invention, an oxidation barrier (46) is placed between the lower metaloxide electrode and the polysilicon. The oxidation barrier may be: a refractory metal sandwiched between two platinum layers which forms a refractory oxide in a platinum matrix; an intermetallic barrier beneath a platinum electrode, e.g. of NiAl; or a combination of Ru and SrRuO3 or similar materials. Thereby, the …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed June 24, 1996 and granted September 11, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended June 24, 2016.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by June 24, 2018.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
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Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.