Field effect transistor and fabrication process thereof
CA 2219598 C · Owner: Iwata, Naotaka · Inventors: Iwata, Naotaka; Yamaguchi, Keiko
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Using a mask opening a gate region, an undoped GaAs layer is selectively etched with respect to an undoped Al0.2Ga0.8As layer by dry etching with introducing a mixture gas of a chloride gas containing only chlorine and a fluoride gas containing only fluorine (e.g. BCl3 + SF6 or so forth). By about 100% over-etching is performed for the undoped GaAs layer, etching (side etching) propagates in transverse direction of the undoped GaAs layer. With using the mask, a gate electrode of WSi is formed. Thus a gap in, a width of about 20 nm is formed by etching in the transverse direction on the drain side of the gate electrode. By this, a hetero junction FET having reduced fluctuation of …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed October 29, 1997 and granted October 23, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended October 29, 2017.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by October 29, 2019.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.