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Expired Canadian patentCanada

Mos charge pump generation and regulation method and apparatus

CA 2216891 C · Owner: Information Storage Devices, Inc. · Inventors: Tran, Hieu Van

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Abstract From the Canadian patent

MOS charge pump generation and regulation method and apparatus of the general type used in a non-volatile memory chip for generating high voltages (~20v). This invention utilizes a current controlled oscillator to generate the clock for the charge pump voltage multiplier. The oscillator frequency is designed to compensate for process temperature, and power supply variations. The charge pump shunt regulator only utilizes regular low voltage NMOS and PMOS from a standard CMOS process. A reference voltage scheme is used in which a regular low voltage PMOS is used as a mirror diode (reference PMOS) to precisely realize a control voltage for the shunting NMOS without violating any breakdown …

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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.

Why it's free to use

  • Filed September 30, 1997 and granted July 24, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended September 30, 2017.
  • A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 30, 2019.
  • We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledSeptember 30, 1997
GrantedJuly 24, 2001
Term endedSeptember 30, 2017
Patent numberCA 2216891 C
Classification (IPC)G11C5/14 +1 more

Timeline

Timeline From CIPO dates

1998200020022004200620082010201220142016Application filedSep 30, 1997Patent grantedJuly 24, 2001Term endedSep 30, 2017

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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.