Electroabsorption optical intensity modulator having a plurality of absorption edge wavelengths

Abstract From the Canadian patent

In an electroabsorption optical intensity modulator a semiconductor buffer a first semiconductor cladding layer, a semiconductor optical absorption layer a second, semiconductor cladding layer and a semiconductor cap layer are formed on a semiconductor substrate. Also a, first electrode is formed on the second semiconductor cap layer, and a second electrode is formed on a second surface of the semiconductor substrate. The semiconductor optical absorption layer includes a first semiconductor optical absorption layer element having a first absorption edge wavelength and a second semiconductor optical absorption layer element having a second absorption edge wavelength different from the first …