Pressure detector
CA 2215083 C · Owner: Ikeda, Nobukazu · Inventors: Dohi, Ryosuke; Ohmi, Tadahiro; Nishino, Koji
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A good quality passive-state film is formed on a gas-contact face of a diaphragm of a pressure detector using a sensor chip to prevent corrosion on, or water content emission from, or catalytic action at a gas-contact face, thereby improving production quality in a semiconductor manufacturing process and providing high accuracy pressure detection. The passive-state film is formed on the gas-contact face of the diaphragm when the diaphragm is mounted on a diaphragm base. The diaphragm base is then fixedly secured to a sensor base in which a sensor chip is housed and a pressure transmitting medium is sealed in a gap between the sensor base and the diaphragm base.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 9, 1997 and granted October 16, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended September 9, 2017.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 9, 2019.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.