Method of separating wafers into individual die
CA 2209884 C · Owner: Ishida, Hisashi · Inventors: Ishida, Hisashi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method of separating a wafer into individual die is disclosed. The wafer includes a substrate with organic thin-film multiple layers. A portion of the organic multiple layers is etched along a scribe line with excimer laser to form a groove to expose a portion of the substrate before sawing the substrate along the scribe line with a saw blade. Plasma etching or ion beam etching or sand blasting is an alternative to the excimer laser.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed July 9, 1997 and granted July 3, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended July 9, 2017.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by July 9, 2019.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.