Method for production of soi substrate by pasting and soi substrate
CA 2202003 C · Owner: Atoji, Tadashi · Inventors: Yamagata, Kenji; Yonehara, Takao; Atoji, Tadashi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
This invention solves the problem of a pasted SOI substrate generating voids in the peripheral part thereof and consequently decreasing the number of devices to be derived therefrom. It concerns a method for the production of a SOI substrate obtained by pasting a first Si substrate possessing a SiO2 surface and a second substrate possessing a Si surface on the SiO2 surface and the Si surface, which method comprises washing the Si surface of the second Si substrate thereby imparting hydrophobicity to the Si surface before the first Si substrate and the second Si substrate are pasted together.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 7, 1997 and granted February 20, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended April 7, 2017.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 7, 2019.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.