Heterojunction energy gradient structure
CA 2201737 C · Owner: Davis, Gary A. · Inventors: Davis, Gary A.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A smooth and monotonic potential energy gradient was established at a p-type (InGa)As - undoped InP heterojunction to efficiently transfer conduction electrons from the (InGa)As:p layer (14) to the InP:? layer (20). This potential energy gradient was established with a compositionally graded p-type semiconductor alloy layer (16) and an n-type InP built-in field layer (18) interposed at the heterojunction. The compositionally graded semiconductor alloy layer spatially distributes the conduction band discontinuity of the (InGa)As - InP heterojunction and the InP:n built-in field layer eliminates potential energy barries from the conduction band over a wide range of externally-applied …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed October 25, 1995 and granted May 16, 2000. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended October 25, 2015.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by October 25, 2017.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.