Method of manufacturing semiconductor device
CA 2199523 C · Owner: Sakamoto, Kazuhisa · Inventors: Sakamoto, Kazuhisa
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A method for manufacturing a semiconductor device in which crystal defects are generated in a semiconductor crystal by irradiating a semiconductor substrate (1) with a particle beam. In the preceding process of the irradiation process the substrate (1) is heat-treated such that the temperature of the substrate (1) is raised rapidly in ten minutes to 550-850 ~C and maintained for one second to 60 minutes. Crystal defects are generated in the crystal by irradiating the crystal with such a particle beam as an electron beam the , life time of carriers is shortened and accordingly the switching speed is increased, not lowering the electric characteristics such as the current amplification …
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed July 9, 1996 and granted September 19, 2000. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended July 9, 2016.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by July 9, 2018.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.