Semiconductor device and manufacturing method of the same
CA 2199346 C · Owner: Endo, Kazuhiko · Inventors: Endo, Kazuhiko; Ohnishi, Yoshitake; Matsumoto, Yoshishige
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film is, manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 6, 1997 and granted June 5, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended March 6, 2017.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 6, 2019.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.