Formation of a metalorganic compound for growing epitaxial semiconductor layers
CA 2198588 C · Owner: Whittaker, Timothy John · Inventors: Martin, Trevor; Rushworth, Simon Andrew; Whittaker, Timothy John
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Semiconductor devices are prepared by growth of epitaxial layers on a substrate from metalorganic compounds of the formula MR3 R being an alkyl , group, or its amine adduct. The metalorganic compound was prepared by reacting a Grignard reagent with the metal halide in an amine solvent.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed September 4, 1995 and granted August 21, 2001. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended September 4, 2015.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by September 4, 2017.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.