Fabrication process of semiconductor substrate
CA 2198552 C · Owner: Yonehara, Takao · Inventors: Sakaguchi, Kiyofumi; Yonehara, Takao
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
SOI substrates are fabricated with sufficient quality and with good reproducibility. At the same time, saving of resources and reduction of cost are realized by reuse of wafer and the like. Carried out to achieve the above are a step of bonding a principal surface of a first substrate to a principal surface of a second substrate the first, substrate being an Si substrate in which at least one layer of non-porous thin film is formed through a porous Si layer, a step of exposing the porous Si layer in a side surface of a bonding substrate comprised of the first substrate and the second substrate a step of, dividing the porous Si layer by oxidizing the bonding substrate, and a step of removing …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 26, 1997 and granted March 26, 2002. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended February 26, 2017.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 26, 2019.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.