Ferroelectric capacitor and method for manufacturing thereof
CA 2197491 C · Owner: Rohm Co. Ltd. · Inventors: Nakamura, Takashi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A dielectric capacitor having excellent dielectric properties which comprises a silicon oxide layer (4), a lower electrode (12) a ferroelectric layer (8), and an upper electrode (15) formed on a silicon substrate (2). The lower electrode (12) is formed of palladium oxide and so is the upper electrode , (15). Palladium oxide prevents the permeation of oxygen through the dielectric layer (8), thus offering a dielectric capacitor having excellent dielectric properties.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed July 5, 1996 and granted January 1, 2002. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended July 5, 2016.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by July 5, 2018.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.