Fabrication process of soi substrate
CA 2192631 C · Owner: Canon Kabushiki Kaisha · Inventors: Atoji, Tadashi
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A fabrication process of SOI substrate efficiently removes a non-porous Si region on a porous Si region and solves the problem that a glass substrate is inevitably etched and the problem that a relatively thick porous Si region is necessary. The fabrication process of SOI substrate comprises a step of making a surface layer of a single-crystal Si substrate porous to form a porous single-crystal Si region 101 on a first non-porous single-crystal Si region 100, a step of forming a second non-porous single-crystal Si region 102 over a surface of the porous single-crystal Si region, a step of bonding a support substrate 110 through an insulating region 103 to a surface of the second non-porous …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed December 11, 1996 and granted August 29, 2000. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended December 11, 2016.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by December 11, 2018.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.