An electron jet vapor deposition system
CA 2190086 C · Owner: Halpern, Bret · Inventors: Halpern, Bret
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A gas jet film deposition system includes a source of thermionically emitted electrons (70) which are accelerated through carrier gas (58) and generate He ions by impact ionization. The resultant electron avalanching and multiplication generates an extremely dense plasma and produces large electron currents. The electron current is collected at a free, high electric field end of a crucible (72). The present system can generate vaporized evaporant which is entrained in the gas jet and thereby provide a high density source of ions. The ions may be presented to a substrate together with or without the evaporant.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed February 9, 1996 and granted September 12, 2000. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended February 9, 2016.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by February 9, 2018.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.