Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
CA 2177465 C · Owner: Edmond, John A. · Inventors: Irvine, Kenneth; Dmitriev, Vladimir; Edmond, John A.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A transition crystal structure is disclosed for providing a good lattice and thermal match between a layer of single crystal silicon carbide (25) and a layer of single crystal gallium nitride (24). The transition structure comprises a buffer formed of a first layer of gallium nitride and aluminum nitride (22). and a second layer of gallium nitride and aluminum nitride (23) adjacent to the first layer. The mole percentage of aluminum nitride in the second layer (23) is substantially different from the mole percentage of aluminum nitride in the first layer (22). A layer of single crystal gallium nitride (24) is formed upon the second layer of gallium nitride and aluminum nitride. In preferred …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed November 1, 1994 and granted October 10, 2000. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended November 1, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by November 1, 2016.
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Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.