A method for chemical vapor deposition of titanium nitride films at low temperatures
CA 2173480 A1 · Owner: Hillman, Joseph T. · Inventors: Hillman, Joseph T.; Foster, Robert F.
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Titanium nitride film is deposited upon a semiconductor substrate (13) by chemical vapor deposition of titanium tetrachloride, ammonia and a diluent at temperatures less than 550 °C. This is accomplished by minimizing the boundary layer thickness (25) over the substrate (13).
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 25, 1994. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended March 25, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 25, 2016.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.