Base resistance controlled mos gated thyristor with improved turn-off characteristics
CA 2133585 A1 · Owner: Nandakumar, Mahalingam · Inventors: Baliga, Bantval Jayant; Nandakumar, Mahalingam
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An inventive thyristor structure includes anode and cathode electrodes, with a diverter electrode being connected to the cathode electrode. A multi-layer body of semiconductor material has a first surface and includes a regenerative portion (110) operatively coupled between the anode and cathode electrodes with a, non-regenerative portion (120) being operatively coupled between the anode and diverter electrodes. The regenerative portion includes adjacent first (170), second (180), third (200) and fourth regions (240) of alternating conductivity type arranged respectively in series between the cathode and anode electrodes wherein the cathode , electrode is in electrical contact with the …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed April 21, 1993. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended April 21, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by April 21, 2015.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.