Modulated-structure of pzt/pt ferroelectric thin films for non-volatile random access memories
CA 2131901 A1 · Owner: Varshney, Usha · Inventors: Varshney, Usha; Kingon, Angus Ian
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
Modulated-structure polycrystalline or heteroepitaxial multilayers of PZT/PT ferroelectric thin films are deposited on a substrate, preferably by laser ablation. The laser ablation of the PZT/PT layers onto a prepared substrate occurs while maintaining the substrate at a temperature between 380 ·C to about 650 ·C. The target source for the PZT/PT laser ablated film may be either bulk PZT and PT ceramics or powders or individual metal oxides or metal pellets. The ferroelectric thin film device may be used for a random access memory.
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed March 15, 1993. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended March 15, 2013.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by March 15, 2015.
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Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.