Semiconductor epitaxial substrate
CA 2131696 C · Owner: Fukuhara, Noboru · Inventors: Fukuhara, Noboru; Hata, Masahiko; Takata, Hiroaki
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A semiconductor epitaxial substrate, characterized in that a crystal is formed by epitaxial growth on a gallium arsenide single crystal substrate whose crystallographic plane azimuth is slanted from that of one of (100) planes at an angle of not more than 1°, that at least part of the epitaxial crystal is an In xGa(1-x)As crystal (wherein 0<x<1) and that the epitaxial growth is carried out by chemical vapor deposition. Since the In xGa(1-x)As layer has reduced microscopic unevenness and reduced variation in thickness the epitaxial, substrate of the present invention can be used as a channel layer of a field effect transistor or as an active layer of a semiconductor laser to endow these …
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Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed January 12, 1994 and granted August 19, 2003. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended January 12, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by January 12, 2016.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
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Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.