Canadian application, no grantCanada
Sub-micron bonded soi by trench planarization
CA 2130149 A1 · Owner: Rivoli, Anthony L. · Inventors: Mclachlan, Craig J.; Rivoli, Anthony L.
Overview
Drawings and full text
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
A silicon on insulator substrate 8 provides islands of silicon 18 of uniform thickness by using a trench etch process and a silicon nitride layer 20 to provide a thickness control and polish stop for the silicon islands 18.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed August 15, 1994. No grant is recorded for it in Canada; had it been granted, its 20-year term would have ended August 15, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by August 15, 2016.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
FiledAugust 15, 1994
GrantedNo grant recorded
Term endedAugust 15, 2014
Patent numberCA 2130149 A1
Classification (IPC)H01L21/20 +1 more
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.