Ion implanting apparatus and ion implanting method
CA 2129403 C · Owner: Canon Kabushiki Kaisha · Inventors: Hashimoto, Hiroyuki
Overview
Its claims, description and drawings are in the Canadian Patents Database.
Open the CIPO recordAbstract From the Canadian patent
An ion implanting apparatus for irradiating a material, for example, a semiconductor wafer with an, ion beam generated at an ion source for implanting, the ion into the material is provided with a magnet, at a side of the material opposite to a side into which the ion is irradiated. Thereby, the implantation is performed without charging thereon and with a high yielding ratio.
Read the whole patent
Listed from its CIPO record in Patent Yard's archive of Canadian patents past their term. Its claims, description and drawings are in the CIPO record and on Google Patents, and the Claude kit works from them.
Why it's free to use
- Filed August 3, 1994 and granted June 1, 1999. A Canadian patent filed from October 1, 1989 lasts 20 years from filing, so its term ended August 3, 2014.
- A certificate of supplementary protection adds at most two years for a drug, so even that would have ended by August 3, 2016.
- We check Canadian rights only. A patent in its family in another country could still be in force: check its family on Google Patents.
Timeline
Timeline From CIPO dates
Sources & verification
Official CIPO records
Everything on this page comes from the CIPO record linked above. Contains information licensed under the Open Government Licence – Canada.